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Axon Awarded Key Patent on Resistance-Change Memory Technology
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Forbes.com  | May 13, 2008

Axon Technologies Corp. announced today that it has been awarded U.S. Patent number 7,372,065 for employing commonly used semiconductor materials copper and silicon dioxide to form Programmable Metallization Cell (PMC) memory devices. PMC is a resistance-change, non-volatile memory technology that f...
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